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0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable

    Buy cheap 0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable from wholesalers
     
    Buy cheap 0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable from wholesalers
    • Buy cheap 0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable from wholesalers

    0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable

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    Brand Name : Huixin
    Model Number : BSS138K
    Certification : ISO9001, ISO4001, IATF16949, UL
    Price : Negotiable
    Payment Terms : T/T, MoneyGram
    Supply Ability : 1 billion pieces/ Month
    Delivery Time : 4-5Weeks
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    0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable

    BSS138K N-Channel Enhancement Mode Power MOSFET

    FEATURES

    1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
    ESD Rating:HBM 2300V
    2. High power and current handing capability
    3. Lead free product is acquired
    4. Surface mount package
    Absolute Maximum Ratings (TA=25℃unless otherwise noted)
    ParameterSymbolLimitUnit
    Drain-Source VoltageVDS50V
    Gate-Source VoltageVGS±20V
    Drain Current-ContinuousID0.22A
    Drain Current-Pulsed (Note 1)IDM0.88A
    Maximum Power DissipationPD0.35W
    Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 150
    Electrical Characteristics (TA=25℃unless otherwise noted)
    ParameterSymbolConditionMinTypMaxUnit
    Off Characteristics
    Drain-Source Breakdown VoltageBVDSSVGS=0V ID=250μA5065-V
    Zero Gate Voltage Drain CurrentIDSSVDS=50V,VGS=0V--1μA
    Gate-Body Leakage CurrentIGSSVGS=±10V,VDS=0V-±110±500nA
    VGS=±12V,VDS=0V-±0.3±10uA
    On Characteristics (Note 3)
    Gate Threshold VoltageVGS(th)VDS=VGS,ID=250μA0.61.11.6V
    Drain-Source On-State ResistanceRDS(ON)VGS=5V, ID=0.2A-1.33
    VGS=10V, ID=0.22A-12
    Forward TransconductancegFSVDS=10V,ID=0.2A0.2--S
    Dynamic Characteristics (Note4)
    Input CapacitanceClssVDS=25V,VGS=0V, F=1.0MHz-30-PF
    Output CapacitanceCoss-15-PF
    Reverse Transfer CapacitanceCrss-6-PF
    Switching Characteristics (Note 4)
    Turn-on Delay Timetd(on)VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω--5nS
    Turn-on Rise Timetr--5nS
    Turn-Off Delay Timetd(off)--60nS
    Turn-Off Fall Timetf--35nS
    Total Gate ChargeQgVDS=25V,ID=0.2A,
    VGS=10V
    --2.4nC
    Drain-Source Diode Characteristics
    Diode Forward Voltage (Note 3)VSDVGS=0V,IS=0.22A--1.3V
    Diode Forward Current (Note 2)IS--0.22A
    Notes:
    1. Repetitive Rating: Pulse width limited by maximum junction temperature.
    2. Surface Mounted on FR4 Board, t ≤ 10 sec.
    3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
    4. Guaranteed by design, not subject to production
    Quality 0.35W 0.22A Silicon Low Voltage Mosfet BSS138K N Channel Rugged And Reliable for sale
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