Sign In | Join Free | My himfr.com
Home > Low VF Schottky Diode >

Silicon Low VF Schottky Diode High Current Capability MBR30100LCT TO-220AB

    Buy cheap Silicon Low VF Schottky Diode High Current Capability MBR30100LCT TO-220AB from wholesalers
     
    Buy cheap Silicon Low VF Schottky Diode High Current Capability MBR30100LCT TO-220AB from wholesalers
    • Buy cheap Silicon Low VF Schottky Diode High Current Capability MBR30100LCT TO-220AB from wholesalers
    • Buy cheap Silicon Low VF Schottky Diode High Current Capability MBR30100LCT TO-220AB from wholesalers

    Silicon Low VF Schottky Diode High Current Capability MBR30100LCT TO-220AB

    Ask Lasest Price
    Brand Name : Huixin
    Model Number : MBR30100LCT TO-220AB
    Certification : ISO14001, ISO9001, IATF16949,UL
    Payment Terms : T/T, Paypal, Cash
    Delivery Time : 2-4Weeks
    Price : Negotiable
    Supply Ability : 1 billion pieces/ Month
    • Product Details
    • Company Profile

    Silicon Low VF Schottky Diode High Current Capability MBR30100LCT TO-220AB

    MBR30100LCT TO-220AB Low VF Schottky Diode

    SCHOTTKY BARRIER RECTIFIER
    Reverse Voltage - 20 to 200 Volts Forward Current - 30Amperes

    FEATURES

    • Plastic package has Underwriters Laboratory Flammability Classification 94V-0
    • Metal silicon junction ,majority carrier conduction
    • Guard ring for overvoltage protection
    • Low power loss ,high efficiency
    • High current capability ,Low forward voltage drop
    • Single rectifier construction
    • High surge capability
    • For use in low voltage ,high frequency inverters,free wheeling ,and polarity protection applications
    • High temperature soldering guaranteed:260 C/10 seconds,
    • 0.25"(6.35mm)from case
    • Component in accordance to RoHS 2002/95/EC and
    • WEEE 2002/96/EC

    MECHANICAL DATA

    • Case: JEDEC TO-220AB molded plastic body
    • Terminals: Lead solderable per MIL-STD-750,method 2026
    • Polarity: As marked
    • Mounting Position: Any
    • Weight: 0.08ounce, 2.24 grams

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

    (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load,derate by 20%.)

    ParameterSYMBOLS

    MBR3020

    LCT

    MBR3030

    LCT

    MBR3040

    LCT

    MBR3045

    LCT

    MBR3060

    LCT

    MBR3080

    LCT

    MBR30100

    LCT

    MBR30150

    LCT


    MBR30200

    LCT


    UNITS
    Maximum Repetitive Peak Reverse VoltageVRRM203040456080100150200Volts
    Maximum RMS VoltageVRMS14212831.542

    56

    70105140Volts
    Maximum DC Blocking VoltageVDC203040456080100150200Volts
    Maximum Average Forward Rectifier Current at TL=110°CIF(AV)30Amps
    Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated loadIFSM250Amps
    Maximum Instantaneous Forward Voltage at 30AVF0.50.650.80.9Volts
    Maximum DC Reverse Current at rated DC blocking voltageTA=25°CIR0.2mA
    TA=125°C3050
    Quality Silicon Low VF Schottky Diode High Current Capability MBR30100LCT TO-220AB for sale
    Inquiry Cart 0
    Send your message to this supplier
     
    *From:
    *To: Guangdong Huixin Electronics Technology Co., Ltd.
    *Subject:
    *Message:
    Characters Remaining: (0/3000)