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0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

    Buy cheap 0.35W N Channel 0.22A BSS138 Field Transistor Mosfets from wholesalers
     
    Buy cheap 0.35W N Channel 0.22A BSS138 Field Transistor Mosfets from wholesalers
    • Buy cheap 0.35W N Channel 0.22A BSS138 Field Transistor Mosfets from wholesalers

    0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

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    Brand Name : Huixin
    Model Number : BSS138
    Certification : ISO9001, ISO4001, IATF16949, UL
    Price : Negotiable
    Payment Terms : T/T, MoneyGram
    Supply Ability : 1 billion pieces/ Month
    Delivery Time : 4-5Weeks
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    0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

    SOT-23 Plastic-Encapsulate MOSFETS
    BSS138 N-Channel 50-V(D-S) MOSFET
    V(BR)DSSRDS(on)MAXID
    50 V3.5Ω@10V220mA
    @4.5V

    BSS138 SOT-23 Datasheet.pdf


    FEATURES
    1.High density cell design for extremely low RDS(on)
    2.Rugged and Relaible
    APPLICATIONS
    1.Direct Logic-Level Interface: TTL/CMOS
    2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
    3.Battery Operated Systems
    4.Solid-State Relays
    Maximum ratings (Ta=25℃ unless otherwise noted)
    ParameterSymbolValueUnit
    Drain-Source VoltageVDS50V
    Continuous Gate-Source VoltageVGSS±20
    Continuous Drain CurrentID0.22A
    Power DissipationPD0.35W
    Thermal Resistance from Junction to AmbientRθJA357/W
    Operating TemperatureTj150
    Storage TemperatureTstg-55 ~+150
    ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified )
    ParameterSymbolTest ConditionMinTypMaxUnits
    Off characteristics
    Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =250µA50V
    Gate-body leakageIGSSVDS =0V, VGS =±20V±100nA
    Zero gate voltage drain currentIDSSVDS =50V, VGS =0V0.5µA
    VDS =30V, VGS =0V100nA
    On characteristics
    Gate-threshold voltage (note 1)VGS(th)VDS =VGS, ID =1mA0.801.50V
    Static drain-source on-resistance (note 1)RDS(on)VGS =10V, ID =0.22A3.50
    VGS =4.5V, ID =0.22A6
    Forward transconductance (note 1)gFSVDS =10V, ID =0.22A0.12S
    Dynamic characteristics (note 2)
    Input capacitanceCissVDS =25V,VGS =0V, f=1MHz27pF
    Output capacitanceCoss13
    Reverse transfer capacitanceCrss6
    Switching characteristics
    Turn-on delay time (note 1,2)td(on)VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω5ns
    Rise time (note 1,2)tr18
    Turn-off delay time (note 1,2)td(off)36
    Fall time (note 1,2)tf14
    Drain-source body diode characteristics
    Body diode forward voltage (note 1)VSDIS=0.44A, VGS = 0V1.4V
    Notes:
    1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
    2. These parameters have no way to verify.
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