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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

    Buy cheap Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet from wholesalers
     
    Buy cheap Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet from wholesalers
    • Buy cheap Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet from wholesalers
    • Buy cheap Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet from wholesalers

    Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

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    Brand Name : Huixin
    Model Number : BC3400
    Certification : ISO9001, ISO4001, IATF16949, UL
    Price : Negotiable
    Payment Terms : T/T, Paypal, Cash
    Supply Ability : 1 billion pieces/ Month
    Delivery Time : 2-4Weeks
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    Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

    SOT-23 Plastic-Encapsulate MOSFETS

    BC3400 N-Channel Enhancement Mode Field Effect Transistor
    FEATURES
    High dense cell design for extremely low RDS(ON)
    Exceptional on-resistance and maximum DC current capability
    Maximum ratings ( Ta=25℃ unless otherwise noted)
    ParameterSymbolValueUnit
    Drain-Source VoltageVDS30V
    Gate-Source VoltageVGS±12V
    Continuous Drain CurrentID5.8A
    Drain Current-Pulsed (note 1)IDM30A
    Power DissipationPD350mW
    Thermal Resistance from Junction to Ambient (note 2)RθJA357℃/W
    Junction TemperatureTJ150
    Storage TemperatureTSTG-55~+150
    Electrical characteristics (Ta=25℃ unless otherwise noted)
    ParameterSymbolTest ConditionMinTypMaxUnits
    Off Characteristics
    Drain-source breakdown voltageV(BR) DSSVGS = 0V, ID =250µA30V
    Zero gate voltage drain currentIDSSVDS =24V,VGS = 0V1µA
    Gate-source leakage currentIGSSVGS =±12V, VDS = 0V±100nA
    On characteristics
    Drain-source on-resistance (note 3)RDS(on)VGS =10V, ID =5.8A35mΩ
    VGS =4.5V, ID =5A40mΩ
    Forward tranconductancegFSVDS =5V, ID =5A8S
    Gate threshold voltageVGS(th)VDS =VGS, ID =250µA0.71.4V
    Dynamic Characteristics (note 4,5)
    Input capacitanceCissVDS =15V,VGS =0V,f =1MHz1050pF
    Output capacitanceCoss99pF
    Reverse transfer capacitanceCrss77pF
    Gate resistanceRgVDS =0V,VGS =0V,f =1MHz3.6
    Switching Characteristics (note 4,5)
    Turn-on delay timetd(on)VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω5ns
    Turn-on rise timetr7ns
    Turn-off delay timetd(off)40ns
    Turn-off fall timetf6ns
    Drain-source diode characteristics and maximum ratings
    Diode forward voltage (note 3)VSDIS=1A,VGS=0V1V

    Note :
    1. Repetitive Rating : Pulse width limited by maximum junction temperature.
    2. Surface Mounted on FR4 Board, t < 5 sec.
    3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
    4. Guaranteed by design, not subject to production testing.
    Quality Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet for sale
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