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800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching

    Buy cheap 800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching from wholesalers
     
    Buy cheap 800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching from wholesalers
    • Buy cheap 800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching from wholesalers

    800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching

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    Brand Name : Huixin
    Model Number : SF58 DO-27
    Certification : ISO14001 ISO9001 ISO/TS16949 UL
    Price : Negotiable
    Payment Terms : T/T, Paypal, Cash
    Supply Ability : 1 billion pieces/ Month
    Delivery Time : 2-4Weeks
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    800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching

    Fast Recovery Epitaxial Rectifier Diode Switching 800V 5A 35ns 2-Pin DO-201AD


    SF51~SF58
    5.0Amp Super Fast Silicon Rectifiers​


    SF51~SF58 DO-27 Datasheet.pdf


    Features:


    • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
    • Open Junction chip Low reverse leakage
    • High forward surge current capability High temperature soldering guaranteed
    • 250 C/10 seconds at terminals

    Mechanical Data:

    • Case : Molded plastic body
    • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
    • Polarity : Polarity symbol marking on body
    • Mounting Position : Any
    • Weight : 0.0345 ounce, 0.98 grams

    Maximum Ratings And Electrical Characteristics:

    Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.


    ParameterSYMBOLSSF51SF52SF53SF54SF55SF56SF57SF58UNITS
    Maximum repetitive peak reverse voltageVRRM50100150200300400500600V
    Maximum RMS voltageVRMS3570105140210280350420V
    Maximum DC blocking voltageVDC50100150200300400500600V
    800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode SwitchingMaximum average forward rectified current at TL =100 CI(AV)5.0A
    Peak forward surge current, 8.3ms single half sine-wave superimposed on rated loadIFSM200.0A
    Maximum instantaneous forward voltage at 5.0AVF0.951.251.7V
    800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching 800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode SwitchingMaximum DC reverse current T A =25 C at rated DC blocking voltage TA=125 CIR10.0
    500
    u A
    Maxinum reverse recovery time(Note 1)Trr35ns
    Typical junction capacitance (Note2)CJ80.0pF
    Typical thermal resistanceRqJA45.0800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode SwitchingC/W
    Operating junction and storage temperature rangeTJ,TSTG-55 to +150800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode SwitchingC

    Note: 1.Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A

    2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.



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